Compact and High-performance 4T Ternary Content-addressable Memory Utilizing Dual-gate Metal Oxide Transistors | Intelligent Semiconductor and Wearable Devices

Compact and High-performance 4T Ternary Content-addressable Memory Utilizing Dual-gate Metal Oxide Transistors

2024/01/25
Teawon Seo, Seongmin Park, Yoonyoung Chung
Korean Conference on Semiconductors (KCS), Gyeongju, Korea

Category: Categories: Conference